RF MEMS Capacitive Switches Fabricated with HDICP CVD SiNx
نویسنده
چکیده
The role of very low temperature (90-170oC) high density inductively coupled plasma chemical vapor deposition (HDICP CVD) process in RF MEMS switch fabrication is addressed. The results on SiNx layers produced by both HDICP CVD and plasma enhanced CVD (PECVD) are compared in terms of surface roughness, breakdown voltage and RF MEMS switch performance. It is found that HDICP CVD can provide very thin (250 Å) nitride layer having root mean square (rms) roughness value of 1.6 nm at very low temperature (90oC). The breakdown strength is measured to be 9MV/cm. A SiNx layer with these characteristics improves the device reliability and dramatically increases its down position capacitance providing additional degree of freedom in RF MEMS switch design.
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